hum2001 ? hum2020 microsemi microwave products 75 technology drive, lowell, ma. 01851, 978-442-5600, fax: 978-937-3748 page 1 rohs compliant versions available tm ? www. microsemi .com copyright ? 2006 rev: 2009-02-05 pin diode high power stud important: for the most current data, consult our website: h u www.microsemi.com u key features ? high power stud mount package. ? high zero bias impedance ? very low inductance and capacitance. ? no internal lead straps. ? small mechanical outline. ? rohs compliant packaging available 1 description with high isolation, low loss, and lo w distortion characteristics, this microsemi power pin diode is perfect for the high power switching applications where size and power handling capability are critical. its advantages also include the low forward bias resistance and high zero bias impedance that are essential for low loss, high isolation and wide bandwidth performance. hermetically sealed, sogo passivated pin chips with full-faced metallurgical bonds on both sides are utilized to achieve high reliability and high surge capability. applications/benefits ? mri applications. ? high power antenna switching. voltage ratings @ 25 ? c (unless otherwise specified) part number reverse voltage @ 10ua (v) hum2001 100 hum2005 500 hum2010 1000 hum2015 1500 hum2020 2000 1 the hum2000 series of products can be supplied with a rohs compliant finish. order humx2001 ? humx2020. consult factory for details. hum2001 ? hum2020
hum2001 ? hum2020 microsemi microwave products 75 technology drive, lowell, ma. 01851, 978-442-5600, fax: 978-937-3748 page 2 rohs compliant versions available tm ? www. microsemi .com copyright ? 2006 rev: 2009-02-05 pin diode high power stud electrical parameters @ 25 ? c (unless otherwise specified) parameter symbol conditions min. typical max. units total capacitance c t v r = 100v, f = 1 mhz 3.4 4.0 pf series resistance r s i f = 500 ma, f = 4 mhz 0.1 0.2 ohms carrier lifetime t l i f = 10 ma/100 v 10 23 s reverse current i r v r = voltage rating 10 a parallel resistance r p f = 10mhz, i f = 100v 50 60 kohms forward voltage v f i f = 500ma 0.85 1.0 v absolute maximum ratings at 25o c 3 b (unless otherwise specified) parameter symbol limits units average power dissipation p d 100 w non-repetitive sinusoidal surge current (8.3 ms) i 13 a storage temperature range t stg -65 ? 175 c operating temperature range t op - 55 ? 150 c thermal resistance junction-to case ?c? stud only r jc 7.5 c/w e e l l e e c c t t r r i i c c a a l l s s
hum2001 ? hum2020 microsemi microwave products 75 technology drive, lowell, ma. 01851, 978-442-5600, fax: 978-937-3748 page 3 rohs compliant versions available tm ? www. microsemi .com copyright ? 2006 rev: 2009-02-05 pin diode high power stud typical rs vs if typical ct vs vr if curve rp vs voltage graphs
hum2001 ? hum2020 microsemi microwave products 75 technology drive, lowell, ma. 01851, 978-442-5600, fax: 978-937-3748 page 4 rohs compliant versions available tm ? www. microsemi .com copyright ? 2006 rev: 2009-02-05 pin diode high power stud package style ?b? package style ?c? package style ?d? package style ?sm? ordering information: add style letter to suffix for the desired package. ie: hum2020d mechanical
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